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  analog devices welcomes hittite microwave corporation no content on the attached documen t has changed www.analog.com www.hittite.com
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attenuators - digital - smt 1 HMC306AMS10 / 306ams10e v 0 0.1113 0.5 db lsb ga as mmic 5-bit d igit a l a ttenu a tor, 0.7 - 3.8 ghz general d escription features functional d iagram the HMC306AMS10 & HMC306AMS10e are general purpose broadband 5-bit positive control gaas ic digital attenuators in 10 lead msop surface mount plastic packages. covering 0.7 to 3.8 ghz, the insertion loss is typically less than 1.5 to 2.3 db. these attenuators bit values are 0.5 (lsb), 1, 2, 4 and 8 db for a total attenuation of 15.5 db. attenuation accuracy is excellent at 0.2 db typical with an iip3 of up to +52 dbm. five bit control voltage inputs, toggled between 0 and +3 to +5v, are used to select each attenuation state. a single vdd bias of +3 to +5v applied through an external 5k ohm resistor is requ- ired. rohs-compliant product 0.5 db lsb steps to 15.5 db single positive control per bit 0.2 db typical bit error miniature 15 mm 2 package: msop10 electrical specifcations, t a = +25 c, vdd= +3v to +5v & vctl= 0/vdd (unless otherwise stated) typical a pplications the HMC306AMS10 / 306ams10e is ideal for: ? cellular; umts/3g infrastructure ? ism, mmds, wlan, wimax ? microwave radio & vsat ? test equipment and sensors parameter frequency (ghz) min. typical max. units insertion loss 0.7 - 1.4 1.4 - 2.3 2.3 - 2.7 2.7 - 3.8 1. 3 1. 5 1. 8 2.3 1. 6 2.0 2.5 2.7 db db db db attenuation range 15.5 db return loss (rf1 & rf2, all atten. states) 0.7 - 1.4 1.4 - 2.3 2.3 - 2.7 2.7 - 3.8 15 14 13 10 21 18 16 13 db db db db attenuation accuracy: (referenced to insertion loss) all attenuation states 0.5 - 7.5 db states 8.0 - 15.5 db states all attenuation states 0.7 - 1.4 1.4 - 2.3 1.4 - 2.3 2.3 - 3.8 (0.30 + 5% of atten. setting) max. (0.25 + 3% of atten. setting) max. (0.15 + 3% of atten. setting) max. (0.30 + 3% of atten. setting) max. db db db db input power for 0.1 db compression vdd = 5v vdd = 3v 0.7 - 3.8 28 27 dbm dbm input third order intercept point (two-tone input power = 10 dbm each tone) vdd = 5v vdd = 3v 0.7 - 3.8 52 48 dbm dbm switching characteristics trise, tfall (10/90% rf) ton, toff (50% ctl to 10/90% rf) 0.7 - 3.8 560 600 ns ns for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
attenuators - digital - smt 2 HMC306AMS10 / 306ams10e v 0 0.1113 0.5 db lsb ga as mmic 5-bit d igit a l a ttenu a tor, 0.7 - 3.8 ghz return loss rf1, rf2 (only major states are shown) a bsolute bit error vs. a ttenuation state insertion loss normalized a ttenuation (only major states are shown) a bsolute bit error vs. frequency (only major states are shown) relative phase vs. frequency (only major states are shown) -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 0.5 1 1.5 2 2.5 3 3.5 4 +25 c +85 c -40 c insertion loss (db) frequency (ghz) -40 -35 -30 -25 -20 -15 -10 -5 0 0.5 1 1.5 2 2.5 3 3.5 4 0.5 db 1 db 2 db 4 db 8 db 14 db return loss (db) frequency (ghz) -18 -15 -12 -9 -6 -3 0 0.5 1 1.5 2 2.5 3 3.5 4 0.5 db 1 db 2 db 4 db 8 db 15.5 db normalized attenuation (db) frequency (ghz) 0 0.3 0.6 0.9 1.2 1.5 0.5 2 3.5 5 6.5 8 9.5 11 12.5 14 15.5 0.9 ghz 1.9 ghz 2.4 ghz 3.5 ghz bit error (db) attenuation state (db) 0 0.3 0.6 0.9 1.2 1.5 0.5 1 1.5 2 2.5 3 3.5 4 0.5 db 1 db 2 db 4 db 8 db 15.5 db bit error (db) frequency (ghz) -40 -20 0 20 40 60 0.5 1 1.5 2 2.5 3 3.5 4 0.5 db 1 db 2 db 4 db 8 db 15.5 db relative phase (deg.) frequency (ghz) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
attenuators - digital - smt 3 HMC306AMS10 / 306ams10e v 0 0.1113 0.5 db lsb ga as mmic 5-bit d igit a l a ttenu a tor, 0.7 - 3.8 ghz truth table control & bias voltages control voltage input attenuation state rf1 - rf2 v1 8 db v2 4 db v3 2 db v4 1 db v5 0.5 db high high high high high reference i.l. high high high high low 0.5 db high high high low high 1 db high high low high high 2 db high low high high high 4 db low high high high high 8 db low low low low low 15.5 db max. atten. any combination of the above states will provide an attenuation approximately equal to the sum of the bits selected. state bias condition low 0 to +0.2v @ 20 a max. high vdd 0.2v @ 20 a max. note: vdd = +3v to 5v 0.00.20.2 0.2v a bsolute maximum ratings control voltage (v1 - v5) vdd + 0.2 vdc bias voltage (vdd) +8 vdc channel temperature 150 c continuous pdiss (t = 85 c) (derate 7.8 mw/ c above 85 c) 0.506 w thermal resistance (channel to package bottom) 128.5 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c rf input power (0.7 - 3.8 ghz) +27 dbm esd sensitivity (hbm) class 1a electrostatic sensitive device observe handling precautions outline d rawing notes: 1. leadframe material: copper alloy 2. dimensions are in inches [millimeters]. 3. dimension does not include moldflash of 0.15mm per side. 4. dimension does not include moldflash of 0.25mm per side. 5. all ground leads must be soldered to pcb rf ground. part number package body material lead finish msl rating package marking [3] HMC306AMS10 low stress injection molded plastic sn/pb solder msl1 [1] h306a xxxx HMC306AMS10e rohs-compliant low stress injection molded plastic 100% matte sn msl1 [2] h306a xxxx [1] max peak refow temperature of 235 c [2] max peak refow temperature of 260 c [3] 4-digit lot number xxxx package information for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
attenuators - digital - smt 4 HMC306AMS10 / 306ams10e v 0 0.1113 0.5 db lsb ga as mmic 5-bit d igit a l a ttenu a tor, 0.7 - 3.8 ghz the circuit board used in the application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb ev a l01 - hmc306 a ms10 [1] item description j1 - j2 pcb mount sma connector j3 - j8 dc pin r1 5 kohm resistor, 0402 pkg. r2 - r6 100 ohm resistor, 0402 pkg. c1 - c2 0402 chip capacitor, select value for lowest frequency u1 HMC306AMS10 / 306ams10e digital attenuators pcb [2] 103391 evaluation pcb 1.5 x 1.5 [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350 evaluation circuit board * r2 - r6= 100 ohm. these resistors are optional and may be used to enhance decoupling of the rf path from the control inputs. a pplication circuit note: dc blocking capacitors c1 & c2 are required on rf1 & rf2. choose c1 = c2 = 100 ~ 300 pf to allow lowest customer specifc frequency to pass with minimal loss. r1= 5k ohm is required to supply voltage to the circuit through either pin 6 or pin 10. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com


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